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LS131 Datasheet PDF

Micross LS131

The LS131 is a monolithic pair of PNP transistors mounted in a single P-DIP package. The monolithic dual chip design reduces parasitics and gives better performance while ensuring extremely tight matching. The LS131 is a direct replacement for discontinued Intersil IT131.
Part No. LS131
Datasheet LS131 Download
Manufacturer
Micross
Description General Purpose
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LS131 datasheet page 1 preview

FEATURES

: ƒ High hfe at low current ƒ Tight matching Tight VBE tracking ƒ ƒ Low Output Capacitance

FEATURES

Direct Replacement for INTERSIL IT131 HIGH hFE @ LOW CURRENT OUTPUT CAPACITANCE VBE tracking

ABSOLUTE MAXIMUM RATINGS

1 @ 25°C (unless otherwise noted) Maximum Temperatures Storage Temperature Operating Junction Temperature Maximum Power Dissipation Continuous Power Dissipation (One side) Continuous Power Dissipation (Both sides) Linear Derating factor (One side) Linear Derating factor (Both sides) Maximum Currents Collector Current MIN ‐‐ ‐‐ ‐‐ TYP ‐‐ ‐‐ ‐‐ MAX 3 10 25 UNITS mV µV/°C nA ≥ 80 @ 10µA ≤ 2.0pF ≤ 10µV°C ‐65°C to +200°C ‐55°C to +150°C 250mW 500mW 2.3mW/°C 4.3mW/°C 10mA CONDITIONS IC = 10µA, VCE = 5V IC = 10µA, VCE = 5V TA = ‐55°C to +125°C IC = 10µA, VCE = 5V MATCHING CHARACTERISTICS @ 25°C (unless otherwise stated) SYMBOL CHARACTERISTIC |VBE1 – VBE2 | Base Emitter Voltage Differential ∆|(VBE1 – VBE2)| / ∆T Base Emitter Voltage Differential Change with Temperature |IB1 – IB2 | Base Current Differential

ELECTRICAL CHARACTERISTICS

@ 25°C (unless otherwise noted) SYMBOL CHARACTERISTICS MIN.