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LS358 Datasheet PDF

Micross LS358

The LS358 is a monolithic pair of PNP transistors mounted in a single P-DIP package. The monolithic dual chip design reduces parasitics and is ideal for use in logging applications. The 8 Pin P-DIP provides ease of manufacturing, and the symmetrical pinout prevents improper orientation.
Part No. LS358
Datasheet LS358 Download
Manufacturer
Micross
Description Log Conformance
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LS358 datasheet page 1 preview

FEATURES

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FEATURES

LOG CONFORMANCE

ABSOLUTE MAXIMUM RATINGS

1 @ 25°C (unless otherwise noted) Maximum Temperatures Storage Temperature Operating Junction Temperature Maximum Power Dissipation Continuous Power Dissipation (One side) Continuous Power Dissipation (Both sides) Linear Derating factor (One side) Linear Derating factor (Both sides) Maximum Currents Collector Current MIN ‐‐ ‐‐ ‐‐ ‐‐ ‐‐ TYP 0.4 1 ‐‐ ‐‐ 5 MAX 1 10 10 0.5 ‐‐ UNITS mV µV/°C nA nA/°C % ∆re = 1.5Ω ‐65°C to +200°C ‐55°C to +150°C 250mW 500mW 2.3mW/°C 4.3mW/°C 10mA CONDITIONS IC = 10µA, VCE = 5V IC = 10µA, VCE = 5V TA = ‐55°C to +125°C IC = 10µA, VCE = 5V IC = 10µA, VCE = 5V TA = ‐55°C to +125°C IC = 10µA, VCE = 5V ƒ Tight matching Low Output Capacitance MATCHING CHARACTERISTICS @ 25°C (unless otherwise stated) SYMBOL CHARACTERISTIC |VBE1 – VBE2 | Base Emitter Voltage Differential ∆|(VBE1 – VBE2)| / ∆T Base Emitter Voltage Differential Change with Temperature |IB1 – IB2 | Base Current Differential |∆ (IB1 – IB2)|/°C...