FEATURES
LOW DRIFT LOW LEAKAGE LOW NOISE ABSOLUTE MAXIMUM RATINGS
@ 25°C (unless otherwise noted) |∆ VGS1‐2 /∆T|= 5µV/°C max. IG = 20pA TYP. en = 10nV/√Hz TYP. LS3955 APPLICATIONS
: Wideband Differential Amps High Input Impedance Amplifiers Maximum Temperatures Storage Temperature ‐65°C to +200°C Operating Junction Temperature +150°C Maximum Voltage and Current for Each Transistor – Note 1 ‐VGSS Gate Voltage to Drain or Source 60V ‐VDSO Drain to Source Voltage 60V ‐IG(f) Gate Forward Current 50mA Maximum Power Dissipation Device Dissipation @ Free Air – Total 400mW @ 25°C MATCHING CHARACTERISTICS @ 25°C UNLESS OTHERWISE NOTED SYMBOL CHARACTERISTICS VALUE UNITS CONDITIONS | V GS1‐2 / T| max. DRIFT VS. 25 µV/°C VDG=20V, ID=200µA TEMPERATURE TA=‐55°C to +125°C | V GS1‐2 | max. OFFSET VOLTAGE 10 mV VDG=20V, ID=200µA MAX. ‐‐ ‐‐ 3000 1000 3 5 5 4.5 4 50 50 ‐‐ 100 5 1 0.1 ‐‐ ‐‐ 0.5 15 6 2 ‐‐ UNITS V V µmho µmho % mA % V V pA nA pA pA µmho µmho µmho dB dB dB nV/√Hz pF pF pF CONDITIONS VDS =...
Micross