LS3N170
LS3N170 is High Speed Switch manufactured by Micross.
Features
DIRECT REPLACEMENT FOR INTERSIL LS3N170 LOW DRAIN TO SOURCE RESISTANCE FAST SWITCHING ABSOLUTE MAXIMUM RATINGS (Note 1) @ 25°C (unless otherwise noted) r DS(on) ≤ 200Ω td(on) ≤ 3.0ns
Maximum Temperatures Storage Temperature Operating Junction Temperature LS3N170 Features
: Maximum Power Dissipation Continuous Power Dissipation
- Low ON Resistance MAXIMUM CURRENT
- Low Capacitance Drain to Source
- High Gain MAXIMUM VOLTAGES
- High Gate Breakdown Voltage Drain to Gate
- Low Threshold Voltage Drain to Source Peak Gate to Source LS3N170 ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted) SYMBOL CHARACTERISTIC MIN TYP. MAX UNITS BVDSS Drain to Source Breakdown Voltage 25 ‐‐ ‐‐ V VDS(on) Drain to Source “On” Voltage ‐‐ ‐‐ 2.0 VGS(th) Gate to Source Threshold Voltage 1.0 ‐‐ 2.0 IGSS Gate Leakage Current ‐‐ ‐‐ 10 p A IDSS Drain Leakage Current “Off” ‐‐ ‐‐ 10 n A ID(on) Drain Current “On” 10 ‐‐ ‐‐ m A gfs Forward Transconductance 1000 ‐‐ ‐‐ µS r DS(on) Drain to Source “On” Resistance ‐‐ ‐‐ 200 Ω
‐65°C to +150°C ‐55°C to +135°C 300m W 30m A ±35V 25V ±35V CONDITIONS ID = 10µA, VGS = 0V ID = 10m A, VGS = 10V VDS = 10V, ID = 10µA VGS = ‐35V, VDS = 0V VGS = 10V, VDS = 10V VGS = 10V, VDS = 10V VDS = 10V, ID = 2m A , f = 1k Hz VGS = 10V, ID = 0A, f = 1k Hz
..
Crss Reverse Transfer Capacitance ‐‐ ‐‐ 1.3 VDS = 0V, VGS = 0V , f = 1MHz p F Ciss Input Capacitance ‐‐ ‐‐ 5 VDS = 10V, VGS = 0V , f = 1MHz Cdb Drain to Body Capacitance ‐‐ ‐‐ 5.0 VDB = 10V, f = 1MHz SWITCHING CHARACTERISTICS SYMBOL CHARACTERISTIC MAX UNITS CONDITIONS td(on) Turn On Delay Time 3 ns VDD = 10V, ID(on) = 10m A, VGS(on) = 10V, VGS(off) = 0V, RG = 50Ω tr Turn On Rise Time 10 ...
