LS3N170 Datasheet PDF

Micross LS3N170

The LS3N170 is an enhancement mode N-Channel Mosfet The LS3N170 is an enhancement mode N-Channel Mosfet designed for use as a General Purpose amplifier or switch The hermetically sealed TO-72 package is well suited for high reliability and harsh environment applications.

Part No.	LS3N170
Datasheet	LS3N170 Download
Manufacturer	Micross
Description	High Speed Switch
Buy	Stock & Price

FEATURES

DIRECT REPLACEMENT FOR INTERSIL LS3N170 LOW DRAIN TO SOURCE RESISTANCE FAST SWITCHING

ABSOLUTE MAXIMUM RATINGS

(Note 1) @ 25°C (unless otherwise noted) rDS(on) ≤ 200Ω td(on) ≤ 3.0ns Maximum Temperatures Storage Temperature Operating Junction Temperature LS3N170

FEATURES

: Maximum Power Dissipation Continuous Power Dissipation Low ON Resistance MAXIMUM CURRENT Low Capacitance Drain to Source High Gain MAXIMUM VOLTAGES High Gate Breakdown Voltage Drain to Gate Low Threshold Voltage Drain to Source Peak Gate to Source LS3N170

ELECTRICAL CHARACTERISTICS

@ 25°C (unless otherwise noted) SYMBOL CHARACTERISTIC MIN TYP. MAX UNITS BVDSS Drain to Source Breakdown Voltage 25 ‐‐ ‐‐ V VDS(on) Drain to Source “On” Voltage ‐‐ ‐‐ 2.0 VGS(th) Gate to Source Threshold Voltage 1.0 ‐‐ 2.0 IGSS Gate Leakage Current ‐‐ ‐‐ 10 pA IDSS Drain Leakage Current “Off” ‐‐ ‐‐ 10 nA ID(on) Drain Current “On” 10 ‐‐ ‐‐ mA gfs Forward Transconductance 1000 ‐‐ ‐‐ µS rDS(on) Drain to Source “On” Resistance...