LS5912
LS5912 is High Gain manufactured by Micross.
Features
Improved Direct Replacement for SILICONIX & NATIONAL 2N5912 LOW NOISE (10KHz) en~ 4n V/√Hz HIGH TRANSCONDUCTANCE (100MHz) gfs ≥ 4000µS ABSOLUTE MAXIMUM RATINGS 1 @ 25°C (unless otherwise noted) Maximum Temperatures Storage Temperature Operating Junction Temperature Maximum Power Dissipation Continuous Power Dissipation (Total) Maximum Currents Gate Current Maximum Voltages Gate to Drain Gate to Source MIN ‐‐ ‐‐ 0.95 ‐‐ TYP ‐‐ ‐‐ ‐‐ MAX 15 40 1 UNITS m V µV/°C % ‐65°C to +150°C ‐55°C to +135°C
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500m W 50m A ‐25V ‐25V CONDITIONS VDG = 10V, ID = 5m A VDG = 10V, ID = 5m A TA = ‐55°C to +125°C VDS = 10V, VGS = 0V
LS5912 Applications:
- Wideband Differential Amps
- High-Speed,Temp-pensated Single Ended Input Amps
- High-Speed parators
- Impedance Converters and vibrations detectors. MATCHING CHARACTERISTICS @ 25°C (unless otherwise stated) SYMBOL CHARACTERISTIC |VGS1 - VGS2 | Differential Gate to Source Cutoff Voltage ∆|VGS1 - VGS2 | / ∆T Differential Gate to Source Cutoff Voltage Change with Temperature IDSS1 / IDSS2 Gate to Source Saturation Current Ratio |IG1 - IG2 | Differential Gate Current gfs1 / gfs2
CMRR
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‐‐ 20 1 n A % Forward Transconductance Ratio2 0.95 ‐‐ ‐‐ mon Mode Rejection Ratio 85 ‐‐ d B TYP. ‐‐ ‐‐ 0.7 ‐‐ ‐‐ ‐1 ‐1 ‐‐ ‐‐ ‐‐ ‐‐ ‐‐ ‐‐ ‐‐ 7 4 MAX. ‐5 ‐‐ ‐4 40 ‐50 ‐50 10000 10000 100 150 5 1.2 1 20 10 UNITS V m A p A µS p F d B n V/√Hz CONDITIONS IG = ‐1µA, VDS = 0V VDS = 10V, ID = 1n A IG = 1m A, VDS = 0V VDG = 10V, IG = 5m A VDS = 10V, VGS = 0V VGS = ‐15V, VDS = 0V VDG = 10V, ID = 5m A VDG = 10V, ID= 5m A Forward Transconductance Output Conductance Input Capacitance Reverse Transfer Capacitance Noise Figure Equivalent Input Noise Voltage 4000 4000 ‐‐ ‐‐ ‐‐ ‐‐ ‐‐ ‐‐ ‐‐
VDG = 10V, ID = 5m A TA = +125°C VDS = 10V, ID = 5m A, f = 1k Hz VDG = 5V to 10V, ID = 5m...
