LSDPAD100 Datasheet | Micross

LSDPAD100 LOW LEAKAGE PICO-AMP DUAL DIODE Linear Systems replaces discontinued Siliconix LSDPAD100 The LSDPAD100 is a low leakage Monolithic Dual Pico-Amp Diode The LSDPAD100 extremely low-leakage monolithic dual diode provides a superior alternative to conventional diode technology when reverse current (leakage) must be minimized. In addition the monolithic dual construction allows excellent capacitance matching per diode. The LSDPAD100 Features a leakage current of 100 p A and is well suited for use in applications such as input protection for operational amplifiers. Features   DIRECT REPLACEMENT FOR SILICONIX LSDPAD100  HIGH ON ISOLATION  EXCELLENT CAPACITANCE MATCHING  ULTRALOW LEAKAGE  REVERSE BREAKDOWN VOLTAGE  REVERSE CAPACITANCE  ABSOLUTE MAXIMUM RATINGS   @ 25°C (unless otherwise noted)  Maximum Temperatures  Storage Temperature  Operating Junction Temperature  Maximum Power Dissipation  Continuous Power Dissipation   MAXIMUM CURRENT Forward Current (Note 1)    20f A  ∆CR ≤ 0.5p F  ≤ 100 p A  BVR ≥ ‐45V  Crss ≤ 2.0p F  .. LSDPAD100 Benefits: - - - Negligible Circuit Leakage Contribution Circuit “Transparent” Except to Shunt High-Frequency Spikes Simplicity of Operation ‐65°C to +150°C  ‐55°C to +135°C  500m W  50m A  LSDPAD100 Applications: - - Op Amp Input Protection Multiplexer Overvoltage Protection   LSDPAD100 ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted) SYMBOL  CHARACTERISTICS  MIN.  TYP.  MAX.  BVR  Reverse Breakdown Voltage  ‐45  ‐‐  ‐‐  VF  Forward Voltage  ‐‐  0.8  1.5  Cr SS  Total Reverse Capacitance  ‐‐  ‐‐  2.0  |CR1‐CR2|  Differential Capacitance (∆CR)  ‐‐  ‐‐  0.5  IR  Maximum Reverse Leakage Current  ‐‐  ‐‐  ‐100  Click To Buy UNITS  V  V  p F  p F  p A  TO-72 (Bottom View) CONDITIONS  IR = ‐1µA  IF = 1m A  VR = ‐5V, f = 1MHz  VR1 =  VR2 = ‐5V, f = 1MHz  VR = ‐ 20V  Notes: 1....