LSDPAD50 Datasheet PDF

Micross LSDPAD50

The LSDPAD50 is a low leakage Monolithic Dual Pico-Amp Diode The LSDPAD50 extremely low-leakage monolithic dual diode provides a superior alternative to conventional diode technology when reverse current (leakage) must be minimized. The LSDPAD50 features a leakage current of 50 pA and is well suited for use in applications such as input protection for operational amplifiers.

Part No.	LSDPAD50
Datasheet	LSDPAD50 Download
Manufacturer	Micross
Description	Dual PicoAmp Diodes
Buy	Stock & Price

FEATURES

DIRECT REPLACEMENT FOR SILICONIX LSDPAD50 HIGH ON ISOLATION EXCELLENT CAPACITANCE MATCHING ULTRALOW LEAKAGE REVERSE BREAKDOWN VOLTAGE REVERSE CAPACITANCE

ABSOLUTE MAXIMUM RATINGS

@ 25°C (unless otherwise noted) Maximum Temperatures Storage Temperature Operating Junction Temperature Maximum Power Dissipation Continuous Power Dissipation MAXIMUM CURRENT Forward Current (Note 1) 20fA ∆CR ≤ 0.5pF ≤ 50 pA BVR ≥ ‐45V Crss ≤ 2.0pF LSDPAD50 Benefits: Negligible Circuit Leakage Contribution Circuit “Transparent” Except to Shunt High-Frequency Spikes Simplicity of Operation ‐65°C to +150°C ‐55°C to +135°C 500mW 50mA LSDPAD50

APPLICATIONS

: Op Amp Input Protection Multiplexer Overvoltage Protection LSDPAD50

ELECTRICAL CHARACTERISTICS

@ 25°C (unless otherwise noted) SYMBOL CHARACTERISTICS MIN. TYP. BVR Reverse Breakdown Voltage ‐45 ‐‐ VF Forward Voltage ‐‐ 0.8 CrSS Total Reverse Capacitance ‐‐ ‐‐ |CR1‐CR2| Differential Capacitance (∆CR) ‐‐ ‐‐ IR Maximum Reverse Leakage Current ‐‐...