LSID100
LSID100 is Dual PicoAmp Diodes manufactured by Micross.
Features a leakage current of 0.1 p A and is well suited for use in applications such as input protection for operational amplifiers. Features
DIRECT REPLACEMENT FOR INTERSIL LSID100 REVERSE LEAKAGE CURRENT REVERSE BREAKDOWN VOLTAGE REVERSE CAPACITANCE ABSOLUTE MAXIMUM RATINGS (Note 1) @ 25°C (unless otherwise noted) Maximum Temperatures Storage Temperature Operating Junction Temperature Maximum Power Dissipation Continuous Power Dissipation Maximum Currents Forward Current Reverse Current Maximum Voltages Reverse Voltage Diode to Diode Voltage IR = 0.1p A BVR ≥ 30V Crss = 0.75p F
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LSID100 Benefits:
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- Negligible Circuit Leakage Contribution Circuit “Transparent” Except to Shunt High-Frequency Spikes Simplicity of Operation Op Amp Input Protection Multiplexer Overvoltage Protection
‐65°C to +200°C ‐55°C to +150°C 300m W 20m A 100µA 30V ±50V
LSID100 Applications:
LSID100 ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted) SYMBOL CHARACTERISTICS MIN. TYP. BVR Reverse Breakdown Voltage 30 ‐‐ VF Forward Voltage 0.8 ‐‐ IR Reverse Leakage Current ‐‐ 0.1 ‐‐ 2.0 |IR1‐IR2| Differential Leakage Current ‐‐ ‐‐ Cr SS Total Reverse Capacitance(Note 2) ‐‐ 0.75
Note 1
- Absolute maximum ratings are limiting values above which LSID100 serviceability may be impaired. Note 2
- Design reference only, not 100% tested
Click To Buy p F TO-78 (Bottom View) Available Packages:
MAX. ‐‐ 1.1 ‐‐ 10 3 1
UNITS V V p A
CONDITIONS IR = 1µA IF = 10m A VR = 1V VR = 10V
VR = 10V, f = 1MHz
FIGURE 1 - Operational Amplifier Protection Input Differential Voltage limited to 0.8V (typ) by Diodes LSID100 D1 and D2. mon Mode Input voltage limited by Diodes LSID100 D3 and D4 to ±15V.
FIGURE 2 - Sample & Hold Circuit Typical Sample and Hold circuit with clipping. LSID100 diodes reduce offset voltages fed capacitively from the LSID100 switch gate.
Micross ponents Europe Tel: +44 1603 788967 Email:...
