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LSJPAD500 Datasheet PDF

Micross LSJPAD500

The LSJPAD500 is a low leakage Pico-Amp Diode packaged in TO-92 The LSJPAD500 extremely low-leakage diode provides a superior alternative to conventional diode technology when reverse current (leakage) must be minimized. The LSJPAD500 features a leakage current of -500 pA and is well suited for use in applications such as input protection for operational amplifiers.
Part No. LSJPAD500
Datasheet LSJPAD500 Download
Manufacturer
Micross
Description PicoAmp Diode
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LSJPAD500 datasheet page 1 preview

FEATURES

DIRECT REPLACEMENT FOR SILICONIX JPAD500 REVERSE BREAKDOWN VOLTAGE ULTRALOW LEAKAGE REVERSE CAPACITANCE

ABSOLUTE MAXIMUM RATINGS

@ 25°C (unless otherwise noted) Maximum Temperatures Storage Temperature Operating Junction Temperature Maximum Power Dissipation Continuous Power Dissipation MAXIMUM CURRENT Forward Current (Note 1) BVR ≥ ‐35V ≤ 500 pA Crss ≤ 2.0pF LSJPAD500 Benefits: ƒ ƒ ƒ Negligible Circuit Leakage Contribution Circuit “Transparent” Except to Shunt High-Frequency Spikes Simplicity of Operation ‐65°C to +150°C ‐55°C to +135°C 350mW 10mA LSJPAD500

APPLICATIONS

: ƒ ƒ Op Amp Input Protection Multiplexer Overvoltage Protection LSJPAD500

ELECTRICAL CHARACTERISTICS

@ 25°C (unless otherwise noted) SYMBOL CHARACTERISTICS MIN. TYP. MAX. BVR Reverse Breakdown Voltage ‐35 ‐‐ ‐‐ VF Forward Voltage ‐‐ 0.8 1.5 CrSS Total Reverse Capacitance ‐‐ 1.5 2 IR Maximum Reverse Leakage Current ‐‐ ‐‐ ‐500 Click To Buy UNITS V V pF pA TO-92 (Bottom View) C A 1 2 CONDITIONS IR = ‐1µA IF = 5mA VR = ‐5V, f = 1MHz VR = ‐ 20V Notes: 1.