LSPAD100 Datasheet PDF

Micross LSPAD100

LSPAD100 is a low leakage Pico-Amp Diode packaged in hermetic TO-72 The LSPAD100 extremely low-leakage diode provides a superior alternative to conventional diode technology when reverse current (leakage) must be minimized. The LSPAD100 features a leakage current of -100 pA and is well suited for use in applications such as input protection for operational amplifiers.

Part No.	LSPAD100
Datasheet	LSPAD100 Download
Manufacturer	Micross
Description	PicoAmp Diode
Buy	Stock & Price

FEATURES

DIRECT REPLACEMENT FOR SILICONIX PAD100 REVERSE BREAKDOWN VOLTAGE ULTRALOW LEAKAGE REVERSE CAPACITANCE

ABSOLUTE MAXIMUM RATINGS

@ 25°C (unless otherwise noted) Maximum Temperatures Storage Temperature Operating Junction Temperature Maximum Power Dissipation Continuous Power Dissipation MAXIMUM CURRENT Forward Current (Note 1) BVR ≥ ‐45V ≤ 100 pA Crss ≤ 2.0pF LSPAD100 Benefits: Negligible Circuit Leakage Contribution Circuit “Transparent” Except to Shunt High-Frequency Spikes Simplicity of Operation ‐65°C to +150°C ‐55°C to +135°C 300mW 50mA LSPAD100

APPLICATIONS

: Op Amp Input Protection Multiplexer Overvoltage Protection LSPAD100

ELECTRICAL CHARACTERISTICS

@ 25°C (unless otherwise noted) SYMBOL CHARACTERISTICS MIN. TYP. BVR Reverse Breakdown Voltage ‐45 ‐‐ VF Forward Voltage ‐‐ 0.8 CrSS Total Reverse Capacitance ‐‐ 1.5 IR Maximum Reverse Leakage Current ‐‐ ‐‐ Click To Buy MAX. ‐‐ 1.5 2 ‐100 UNITS V V pF pA TO-72 (Bottom View) CONDITIONS IR = ‐1µA IF = 5mA VR = ‐5V, f = 1MHz VR = ‐ 20V Notes: 1.