LSU309 Datasheet PDF

Micross LSU309

The LSU309 is a high frequency n-channel JFET offering a wide range and low noise performance. The hermetically sealed TO-18 package is well suited for high reliability and harsh environment applications.

Part No.	LSU309
Datasheet	LSU309 Download
Manufacturer	Micross
Description	Amplifier
Buy	Stock & Price

FEATURES

DIRECT REPLACEMENT FOR SILICONIX U309 OUTSTANDING HIGH FREQUENCY GAIN LOW HIGH FREQUENCY NOISE

ABSOLUTE MAXIMUM RATINGS

@ 25°C1 Gpg = 11.5dB NF = 2.7dB Maximum Temperatures Storage Temperature ‐55°C to +150°C High Power Low Noise gain Operating Junction Temperature ‐55°C to +135°C Dynamic Range greater than 100dB Maximum Power Dissipation Easily matched to 75Ω input Continuous Power Dissipation 500mW LSU309

APPLICATIONS

: MAXIMUM CURRENT Gate Current 10mA UHV / VHF Amplifiers MAXIMUM VOLTAGES Mixers Gate to Drain Voltage or Gate to Source Voltage ‐25V Oscillators LSU309

ELECTRICAL CHARACTERISTICS

@ 25°C (unless otherwise noted) SYMBOL CHARACTERISTIC MIN TYP. MAX UNIT CONDITIONS BVGSS Gate to Source Breakdown Voltage ‐25 ‐‐ ‐‐ V VDS = 0V, IG = ‐1µA VGS(F) Gate to Source Forward Voltage 0.7 ‐‐ 1 VDS = 0V, IG = 10mA VGS(off) Gate to Source Cutoff Voltage ‐1 ‐‐ ‐4 VDS = 10V, ID = 1nA IDSS Drain to Source Saturation Current2 12 ‐‐ 30 mA VDS = 10V, VGS = 0V IG Gate Operat...