LSU310 Datasheet PDF

Micross LSU310

The LSU310 is a high frequency n-channel JFET offering a wide range and low noise performance. The hermetically sealed TO-18 package is well suited for high reliability and harsh environment applications.

Part No.	LSU310
Datasheet	LSU310 Download
Manufacturer	Micross
Description	Amplifier
Buy	Stock & Price

FEATURES

DIRECT REPLACEMENT FOR SILICONIX LSU310 OUTSTANDING HIGH FREQUENCY GAIN LOW HIGH FREQUENCY NOISE

ABSOLUTE MAXIMUM RATINGS

@ 25°C1 Gpg = 11.5dB NF = 2.7dB Maximum Temperatures Storage Temperature ‐55°C to +150°C High Power Low Noise gain Operating Junction Temperature ‐55°C to +135°C Dynamic Range greater than 100dB Maximum Power Dissipation Easily matched to 75Ω input Continuous Power Dissipation 500mW LSU310

APPLICATIONS

: MAXIMUM CURRENT Gate Current 10mA UHV / VHF Amplifiers MAXIMUM VOLTAGES Mixers Gate to Drain Voltage or Gate to Source Voltage ‐25V Oscillators LSU310

ELECTRICAL CHARACTERISTICS

@ 25°C (unless otherwise noted) SYMBOL CHARACTERISTIC MIN TYP. MAX UNIT CONDITIONS BVGSS Gate to Source Breakdown Voltage ‐25 ‐‐ ‐‐ V VDS = 0V, IG = ‐1µA VGS(F) Gate to Source Forward Voltage 0.7 ‐‐ 1 VDS = 0V, IG = 10mA VGS(off) Gate to Source Cutoff Voltage ‐2 ‐‐ ‐6.5 VDS = 10V, ID = 1nA IDSS Drain to Source Saturation Current2 24 ‐‐ 60 mA VDS = 10V, VGS = 0V IG Gate Op...