LSU402
LSU402 is Low Noise manufactured by Micross.
Features a 5m V offset and 10-µV/°C drift. The LSU402 is a direct replacement for discontinued Siliconix U402. The hermetically sealed TO-71 & TO-78 packages are well suited for military applications. (See Packaging Information). Features
LOW DRIFT LOW NOISE LOW PINCHOFF ABSOLUTE MAXIMUM RATINGS @ 25°C (unless otherwise noted) | V GS1‐2 / T| = 10µV/°C TYP. en = 6n V/Hz @ 10Hz TYP. Vp = 2.5V TYP.
U402 / LSU402 Applications:
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- - Wideband Differential Amps High-Speed,Temp-pensated Single Ended Input Amps High-Speed parators Impedance Converters and vibrations detectors.
Maximum Temperatures Storage Temperature ‐65°C to +150°C Operating Junction Temperature +150°C Maximum Voltage and Current for Each Transistor - Note 1 ‐VGSS Gate Voltage to Drain or Source 50V ‐VDSO Drain to Source Voltage 50V ‐IG(f) Gate Forward Current 10m A Maximum Power Dissipation Device Dissipation @ Free Air - Total 300m W MATCHING CHARACTERISTICS @ 25°C UNLESS OTHERWISE NOTED SYMBOL CHARACTERISTICS VALUE UNITS CONDITIONS | V GS1‐2 / T| max. DRIFT VS. 10 µV/°C VDG=10V, ID=200µA TEMPERATURE TA=‐55°C to +125°C | V GS1‐2 | max. OFFSET VOLTAGE 10 m V VDG=10V, ID=200µA TYP. 60 ‐‐ ‐‐ ‐‐ 0.6 ‐‐ 1 ‐‐ ‐‐ ‐4 ‐‐ ‐‐ 5 ‐‐ 0.2 ‐‐ ‐‐ 20 ‐‐ ‐‐ MAX. ‐‐ ‐‐ 7000 2000 3 10 5 ‐2.5 ‐2.3 ‐15 ‐10 100 5 20 2 ‐‐ 0.5 ‐‐ 8 1.5 UNITS V V µmho µmho % m A % V V p A n A p A p A µmho µmho d B d B n V/√Hz p F p F CONDITIONS VDS = 0 ID=1n A I G= 1n A ID= 0 IS= 0 VDG= 10V VGS= 0V f = 1k Hz VDG= 15V ID= 200µA f = 1k Hz VDG= 10V VGS= 0V VDS= 15V ID= 1n A VDS=15V ID=200µA VDG= 15V ID= 200µA TA= +125°C VDS =0 VDG= 15V TA= +125°C VDG= 10V VGS= 0V VDG= 15V ID= 500µA VDS = 10 to 20V ...
