• Part: MYXDB0650-10CEN
  • Description: SiC Schottky Diode Rectifier Bridge
  • Category: Diode
  • Manufacturer: Micross
  • Size: 269.25 KB
Download MYXDB0650-10CEN Datasheet PDF
Micross
MYXDB0650-10CEN
MYXDB0650-10CEN is SiC Schottky Diode Rectifier Bridge manufactured by Micross.
Si C Schottky Diode Rectifier Bridge 650 Volt 10 Amp Hermetic MYXDB0650-10CEN Product Oaverrvyiew Features - High voltage 650V isolation - High current 10A in- High temperature 210°C - Be O free and Ro HS pliant - HMP solder tinned leads available relim- Electrically isolated flange - Silicon Carbide (Si C) Schottky diodes exhibit low forward voltage and superior high temperature performance - No reverse recovery time P- Screening options available Benefits - Essentially no switching losses - Higher efficiency - Reduction of heat sink requirements Applications - Harsh environment rectification - Harsh environment regulators ºº mercial high temperature ºº In accordance with MIL-PRF-19500 ºº Other options available on request - Other packaging options available Absolute Maximum Ratings- (Per single diode) Symbols VR VRRM IF(AVG) IFRM IFSM PD TJ Tstg Parameters DC Reverse Voltage Repetitive Peak Reverse Voltage Average Forward...