FEATURES
DIRECT REPLACEMENT FOR SILICONIX PN4117 LOW POWER MINIMUM CIRCUIT LOADING ABSOLUTE MAXIMUM RATINGS
@ 25°C (unless otherwise noted) Maximum Temperatures Storage Temperature Operating Junction Temperature Maximum Power Dissipation Continuous Power Dissipation MAXIMUM CURRENT Gate Current (Note 1) MAXIMUM VOLTAGES Gate to Drain or Gate to Source (Note 2) IDSS<90 µA IGSS<10 pA PN4117 Benefits: Insignificant Signal Loss/Error Voltage with High-Impedance Source Low Power Consumption (Battery) Maximum Signal Output, Low Noise High Sensitivity to Low-Level Signals ‐65°C to +175°C ‐55°C to +150°C 300mW 50mA ‐40V PN4117 APPLICATIONS
: High-Impedance Transducer Smoke Detector Input Infrared Detector Amplifier Precision Test Equipment PN4117 ELECTRICAL CHARACTERISTICS
@ 25°C (unless otherwise noted) SYMBOL CHARACTERISTIC MIN TYP. MAX UNITS CONDITIONS BVGSS Gate to Source Breakdown Voltage ‐40 ‐‐ ‐‐ V IG = ‐1µA, VDS = 0V VGS(off) Gate to Source Cutoff Voltage ‐0.6 ‐‐ ‐1.8 V...
Micross