• Part: SST404
  • Description: Low Noise
  • Manufacturer: Micross
  • Size: 293.67 KB
Download SST404 Datasheet PDF
Micross
SST404
SST404 is Low Noise manufactured by Micross.
SST404 LOW NOISE, LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET Linear Systems replaces discontinued Siliconix SST404 The SST404 is a Low Noise, Low Drift, Monolithic Dual N-Channel JFET The SST404 is a high-performance monolithic dual JFET featuring extremely low noise, tight offset voltage and low drift over temperature specifications, and is targeted for use in a wide range of precision instrumentation applications. The SST404 Features a 5m V offset and 10-µV/°C drift. The SST404 is a direct replacement for discontinued Siliconix SST404. The 8 Pin P-DIP and 8 Pin SOIC provide ease of manufacturing, and the symmetrical pinout prevents improper orientation. (See Packaging Information). Features   LOW DRIFT  LOW NOISE  LOW PINCHOFF  ABSOLUTE MAXIMUM RATINGS   @ 25°C (unless otherwise noted)  | V GS1‐2 / T| = 10µV/°C TYP.  en = 6n V/Hz @ 10Hz TYP.  Vp = 2.5V TYP.  SST404 Applications: - - - - Wideband Differential Amps High-Speed,Temp-pensated Single-Ended Input Amps High-Speed parators Impedance Converters and vibrations detectors. Maximum Temperatures  Storage Temperature  ‐65°C to +150°C  Operating Junction Temperature  +150°C  Maximum Voltage and Current for Each Transistor -  Note 1  ‐VGSS  Gate Voltage to Drain or Source  50V  ‐VDSO  Drain to Source Voltage  50V  ‐IG(f)  Gate Forward Current  10m A  Maximum Power Dissipation  Device Dissipation @ Free Air -  Total                 300m W    MATCHING CHARACTERISTICS @ 25°C UNLESS OTHERWISE NOTED SYMBOL  CHARACTERISTICS  VALUE  UNITS  CONDITIONS  | V GS1‐2 / T| max.  DRIFT VS.  25  µV/°C  VDG=10V, ID=200µA  TEMPERATURE  TA=‐55°C to +125°C  | V GS1‐2 | max.  OFFSET VOLTAGE  15  m V  VDG=10V, ID=200µA  TYP.  60  ‐‐    ‐‐  ‐‐  0.6    ‐‐  1    ‐‐  ‐‐    ‐4  ‐‐  ‐‐  5    ‐‐  0.2    ‐‐    ‐‐  20    ‐‐  ‐‐  MAX.  ‐‐  ‐‐    7000  2000  3    10  5    ‐2.5  ‐2.3    ‐15  ‐10  100  5    20  2    ‐‐    0.5  ‐‐    8  1.5  UNITS  V  V    µmho  µmho  %    m A  %    V  V    p A  n A  p A  p A    µmho  µmho    d B    d B  n V/√Hz    p F  p F ...