SST406
SST406 is Low Noise manufactured by Micross.
SST406 LOW NOISE, LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET
Linear Systems replaces discontinued Siliconix SST406
The SST406 is a Low Noise, Low Drift, Monolithic Dual N-Channel JFET
The SST406 is a high-performance monolithic dual JFET featuring extremely low noise, tight offset voltage and low drift over temperature specifications, and is targeted for use in a wide range of precision instrumentation applications. The SST406 Features a 5m V offset and 10-µV/°C drift. The SST406 is a direct replacement for discontinued Siliconix SST406. The 8 Pin P-DIP and 8 Pin SOIC provide ease of manufacturing, and the symmetrical pinout prevents improper orientation. (See Packaging Information). Features
LOW DRIFT LOW NOISE LOW PINCHOFF ABSOLUTE MAXIMUM RATINGS @ 25°C (unless otherwise noted) | V GS1‐2 / T| = 10µV/°C TYP. en = 6n V/Hz @ 10Hz TYP. Vp = 2.5V TYP.
SST406 Applications:
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- - Wideband Differential Amps High-Speed,Temp-pensated Single-Ended Input Amps High-Speed parators Impedance Converters and vibrations detectors.
Maximum Temperatures Storage Temperature ‐65°C to +150°C Operating Junction Temperature +150°C Maximum Voltage and Current for Each Transistor - Note 1 ‐VGSS Gate Voltage to Drain or Source 50V ‐VDSO Drain to Source Voltage 50V ‐IG(f) Gate Forward Current 10m A Maximum Power Dissipation Device Dissipation @ Free Air - Total 300m W MATCHING CHARACTERISTICS @ 25°C UNLESS OTHERWISE NOTED SYMBOL CHARACTERISTICS VALUE UNITS CONDITIONS | V GS1‐2 / T| max. DRIFT VS. 80 µV/°C VDG=10V, ID=200µA TEMPERATURE TA=‐55°C to +125°C | V GS1‐2 | max. OFFSET VOLTAGE 40 m V VDG=10V, ID=200µA TYP. 60 ‐‐ ‐‐ ‐‐ 0.6 ‐‐ 1 ‐‐ ‐‐ ‐4 ‐‐ ‐‐ 5 ‐‐ 0.2 ‐‐ ‐‐ 20 ‐‐ ‐‐ MAX. ‐‐ ‐‐ 7000 2000 3 10 5 ‐2.5 ‐2.3 ‐15 ‐10 100 5 20 2 ‐‐ 0.5 ‐‐ 8 1.5 UNITS V V µmho µmho % m A % V V p A n A p A p A µmho µmho d B d B n V/√Hz p F p F ...
