SST440
SST440 is Wide Band High Gain manufactured by Micross.
URES Direct Replacement for SILICONIX SST440 HIGH CMRR LOW GATE LEAKAGE ABSOLUTE MAXIMUM RATINGS 1 @ 25°C (unless otherwise noted) Maximum Temperatures Storage Temperature Operating Junction Temperature Maximum Power Dissipation Continuous Power Dissipation (Total) Maximum Currents Gate Current Maximum Voltages Gate to Drain Gate to Source Gate to Gate MIN TYP 20 MAX 10 UNITS m V µV/°C CMRR ≥ 85d B IGSS ≤ 1 p A
‐65°C to +150°C ‐55°C to +135°C 500m W 50m A ‐25V ‐25V ±50V CONDITIONS VDG = 10V, ID = 5m A VDG = 10V, ID = 5m A TA = ‐55°C to +125°C VDS = 10V, VGS = 0V
MATCHING CHARACTERISTICS @ 25°C (unless otherwise stated) SYMBOL CHARACTERISTIC |VGS1 - VGS2 | Differential Gate to Source Cutoff Voltage ∆|VGS1 - VGS2 | / ∆T Differential Gate to Source Cutoff Voltage Change with Temperature IDSS1 / IDSS2 Gate to Source Saturation Current Ratio Gfs1 / Gfs2 Forward Transconductance Ratio2
CMRR
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0.07 0.97 85 mon Mode Rejection Ratio d B TYP. ‐3.5 15 ‐1 ‐1 6 70 3 1 4 MAX. ‐6 30 ‐500 ‐500 9 200 UNITS V V m A p A p A m S µS p F p F n V/√Hz CONDITIONS IG = ‐1µA, VDS = 0V VDS = 10V, ID = 1n A VDS = 10V, VGS = 0V VGS = ‐15V, VDS = 0V VDG = 10V, ID = 5m A Forward Transconductance Output Conductance Input Capacitance Reverse Transfer Capacitance Equivalent Input Noise Voltage 4.5
SOIC (Top View)
VDS = 10V, ID = 5m A, f = 1k Hz
VDG = 5 to 10V, ID = 5m A
ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted) SYMBOL CHARACTERISTICS MIN. BVGSS Gate to Source Breakdown Voltage ‐25 VGS(off) Gate to Source Cutoff Voltage ‐1 IDSS Gate to Source Saturation Current 6 IGSS Gate Leakage Current3 IG Gate Operating Current gfs gos CISS CRSS en
VDS = 10V, ID= 5m A, f = 1k Hz VDS = 10V, ID = 5m A, f = 1MHz VDS = 10V, ID = 5m A, f = 10k Hz
Notes: 1. Absolute Maximum ratings are limiti...
