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SSTDPAD5 Datasheet PDF

Micross SSTDPAD5

The SSTDPAD5 is a low leakage Monolithic Dual Pico-Amp Diode The SSTDPAD5 extremely low-leakage monolithic dual diode provides a superior alternative to conventional diode technology when reverse current (leakage) must be minimized. The SSTDPAD5 features a leakage current of -5 pA and is well suited for use in applications such as input protection for operational amplifiers.
Part No. SSTDPAD5
Datasheet SSTDPAD5 Download
Manufacturer
Micross
Description Dual Low Leakage
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SSTDPAD5 datasheet page 1 preview

FEATURES

DIRECT REPLACEMENT FOR SILICONIX SSTDPAD5 HIGH ON ISOLATION EXCELLENT CAPACITANCE MATCHING ULTRALOW LEAKAGE REVERSE BREAKDOWN VOLTAGE REVERSE CAPACITANCE

ABSOLUTE MAXIMUM RATINGS

@ 25°C (unless otherwise noted) Maximum Temperatures Storage Temperature Operating Junction Temperature Maximum Power Dissipation Continuous Power Dissipation MAXIMUM CURRENT Forward Current (Note 1) 20fA ∆CR ≤ 0.5pF ≤ 5 pA BVR ≥ ‐30V Crss ≤ 4.0pF SSTDPAD5 Benefits: ƒ ƒ ƒ Negligible Circuit Leakage Contribution Circuit “Transparent” Except to Shunt High-Frequency Spikes Simplicity of Operation ‐65°C to +150°C ‐55°C to +135°C 500mW 50mA SSTDPAD5

APPLICATIONS

: ƒ ƒ Op Amp Input Protection Multiplexer Overvoltage Protection SSTDPAD5

ELECTRICAL CHARACTERISTICS

@ 25°C (unless otherwise noted) SYMBOL CHARACTERISTICS MIN. TYP. BVR Reverse Breakdown Voltage ‐45 ‐‐ VF Forward Voltage ‐‐ 0.8 CrSS Total Reverse Capacitance ‐‐ ‐‐ |CR1‐CR2| Differential Capacitance (∆CR) ‐‐ ‐‐ IR Maximum Reverse Leakage Current ‐‐...