SSTPAD10
SSTPAD10 is Dual Low Leakage manufactured by Micross.
SSTPAD10 LOW LEAKAGE PICO-AMP DIODE
Linear Systems replaces discontinued Siliconix SSTPAD10
The SSTPAD10 is a low leakage Pico-Amp Diode packaged in SOT-23
The SSTPAD10 extremely low-leakage diode provides a superior alternative to conventional diode technology when reverse current (leakage) must be minimized. The SSTPAD10 Features a leakage current of -10 p A and is well suited for use in applications such as input protection for operational amplifiers. Features
DIRECT REPLACEMENT FOR SILICONIX SSTPAD10 REVERSE BREAKDOWN VOLTAGE ULTRALOW LEAKAGE REVERSE CAPACITANCE ABSOLUTE MAXIMUM RATINGS @ 25°C (unless otherwise noted) Maximum Temperatures Storage Temperature Operating Junction Temperature Maximum Power Dissipation Continuous Power Dissipation MAXIMUM CURRENT Forward Current (Note 1)
BVR ≥ ‐30V ≤ 10 p A Crss ≤ 2p F
SSTPAD10 Benefits:
- -
- Negligible Circuit Leakage Contribution Circuit “Transparent” Except to Shunt High-Frequency Spikes Simplicity of Operation
‐65°C to +150°C ‐55°C to +135°C 350m W 10m A
SSTPAD10 Applications:
- - Op Amp Input Protection Multiplexer Overvoltage Protection
SSTPAD10 ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted) SYMBOL CHARACTERISTICS MIN. TYP. BVR Reverse Breakdown Voltage ‐35 ‐‐ VF Forward Voltage ‐‐ 0.8 Cr SS Total Reverse Capacitance ‐‐ 1.5 IR Maximum Reverse Leakage Current ‐‐ ‐‐
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MAX. ‐‐ 1.5 2 ‐10 UNITS V V p F p A SOT-23 (Top View)
CONDITIONS IR = ‐1µA IF = 5m A VR = ‐5V, f = 1MHz VR = ‐ 20V
Notes: 1....
