30MPA0562 Datasheet | Mimix Broadband

Features Ka-Band 1 W Power Amplifier 27.0 d B Small Signal Gain +30.0 d Bm Saturated Output Power 100% On-Wafer RF, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883 Method 2010 General Description Mimix Broadband's three stage 28.0-31.0 GHz Ga As MMIC power amplifier has a small signal gain of 27.0 d B with +30.0 d Bm saturated output power. This MMIC uses Mimix Broadband’s 0.15 µm Ga As PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. The chip has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process. This device is well suited for Millimeter-wave Pointto-Point Radio, LMDS, SAT and VSAT applications. uc Units GHz d B d B d B d B d B d Bm VDC VDC m A m A m A Min. 28.0 -1.0 - Absolute Maximum Ratings Supply Voltage (Vd) Supply Current (Id1,2,3) Gate Bias Voltage (Vg) Input Power (Pin) Storage Temperature (Tstg) Operating Temperature (Ta) Channel Temperature (Tch) Electrical Characteristics (Ambient Temperature T = 25 o C) Parameter Frequency Range (f ) Input Return Loss (S11) Output Return Loss (S22) Small Signal Gain (S21) Gain Flatness (ΔS21) Reverse Isolation (S12) Saturated Output Power (Psat) 2 Drain Bias Voltage (Vd1,2,3) Gate Bias Voltage (Vg1,2,3) Supply Current (Id1) (Vd=5.0V, Vg=-0.7V Typical) Supply Current (Id2) (Vd=5.0V, Vg=-0.7V Typical) Supply Current (Id3) (Vd=5.0V, Vg=-0.7V Typical) (2) Measured using constant current. pr od (1) Channel temperature affects a device's MTTF. It is remended to keep channel temperature as low as possible for maximum life. Pr e- Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband. Characteristic Data and Specifications are subject to change without notice. ©2005 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S....