30SPA0557 Datasheet | Mimix Broadband

Features Ka-Band 2W Power Amplifier 21.0 d B Small Signal Gain +33.0 d Bm Saturated Output Power 100% On-Wafer RF, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883 Method 2010 General Description Mimix Broadband's three stage 27.0-32.0 GHz Ga As MMIC power amplifier has a small signal gain of 21.0 d B with +33 d Bm saturated output power. This MMIC uses Mimix Broadband’s 0.15 µm Ga As PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. The chip has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process. This device is well suited for Millimeter-wave Point-to Point Radio, LMDS, SAT and VSAT applications. Absolute Maximum Ratings Supply Voltage (Vd) Supply Current (Id1,2,3) Gate Bias Voltage (Vg) Input Power (Pin) Storage Temperature (Tstg) Operating Temperature (Ta) Channel Temperature (Tch) +6.5 VDC 165,415,790 m A +0.3 VDC TBD -65 to +165 OC -55 to MTTF Table1 MTTF Table 1 ro Parameter Frequency Range (f ) Input Return Loss (S11) Output Return Loss (S22) Small Signal Gain (S21) Gain Flatness (∆S21) Reverse Isolation (S12) Saturated Output Power (Psat) 2 Drain Bias Voltage (Vd1,2,3) Gate Bias Voltage (Vg1,2,3) Supply Current (Id1) (Vd=5.0V, Vg=-0.7V Typical) Supply Current (Id2) (Vd=5.0V, Vg=-0.7V Typical) Supply Current (Id3) (Vd=5.0V, Vg=-0.7V Typical) (2) Measured using constant current. -p Electrical Characteristics (Ambient Temperature T = 25 o C) Units GHz d B d B d B d B d B d Bm VDC VDC m A m A m A Min. 27.0 -1.0 Typ. 10.0 10.0 21.0 +/-1.0 50.0 +33.0 +5.0 -0.7 125 315 600 Max. 32.0 +6.0 0.0 150 375 720 Pr e du (1) Channel temperature affects a device's MTTF. It is remended to keep channel temperature as low as possible for maximum life. ct io Page 1 of 5 Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615...