CFH2162-P3 Datasheet | Mimix Broadband

Features t High Gain t +36 d Bm Power Output t Proprietary Power FET Process t >45% Linear Power Added Efficiency t +33 d Bm with 30 d Bc Third Order Products Applications t PCS/PCN Base Stations t Wireless Local Loop 1.8 to 2.0 GHz +36 d Bm Power Ga As FET Package Diagram Description The CFH2162-P3 is a high-gain, linear FET intended for driver amplifier applications in high-power systems, and output stage usage in medium power applications at power levels up to +36 d Bm. The device is easily matched and provides excellent linearity at 4 Watts. Manufactured in Celeritek’s proprietary power FET process, this device is assembled in a power flange package. Specifications (TA = 25°C) The following specifications are guaranteed at room temperature in Celeritek test fixture at 1.95 GHz. Parameters Conditions Min Typ Max Units Absolute Maximum Ratings Parameter Symbol Rating Vd = 10V, Id = 1100 m A (Quiescent) P-1d B G-1 d B 3rd Order Products (1) Efficiency @ P1d B Vd = 8V, Id = 1300 m A (Quiescent) P-1d B G-1 d B Parameters Conditions 36.0 37.0 13.0 14.0 30 - - - Min - - - - - - Max d Bm d B d Bc % d Bm d B Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Dissipation Channel Temperature Storage Temperature 35 45 36.0 13.0 Typ VDS VGS IDS PT TCH TSTG 15V (3) -5V Idss 10W 175°C -65°C to +175°C Notes: 1. Sum to two tones with 1 MHz spacing = 33 d Bm. 2. See thermal considerations information. 3. Maximum potential difference across the device (Vd + Vg) cannot exceed 18V. Power Flange Package Physical Dimensions Units gm Idss Vp BVGD ΘJL (2) Vds = 2.0V, Vgs = 0V Vds = 2.0V, Vgs = 0V Vds = 3.0V, Ids = 65 m A Igd = 6.5 m A @150°C TCH - - - 20 - 1700 2.8 -1.8 24 8 - - - - m S A Volts Volts °C/W ?O26K? O)X?h W2@@f?@@@@@@6X? O2@@)?g?W&@@@f J@@@@@@@)X W2@@@@h W&@@@@L?e7@@(M??@@1 - @@@@@@?f?W&@@@@@@??J@@(Ye?@@@ V+?'@@g?7@@V'@@H??@@@f?@@@ @@@?f?@@5e@@f@@@?e?@@@ @@ @@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@...