CHV2711-QJ Datasheet | Mimix Broadband

Features Internal Pre-matching Single Supply operation Power Gain 8 d B ESD Protection on board Current Control for multiple applications 2.5% EVM @ 26.5 d Bm avg power, 802.16 OFDM signal format, PAR = 9 d B Plastic Surface mount packaging Low Thermal Resistance Ideal for Wi MAX applications Lead Free and Ro HS pliant 6x6 QFN package The CHV2711 internally pre-matched power HBT device provides 8 d B of gain, 2.5% EVM at 26.5 d Bm output power for 802.16 OFDM signal with a peak to average power ratio of 9 d B. The device operates off a single supply voltage up to 12V and includes internal bias circuitry to enable exact setting of the quiescent current using an external Vcontrol. This Vcontrol is non-unique voltage setting and the same value can be used .. for each part depending on the required Icq. The device is ideal for high linearity, high data rate applications such as Wi MAX. Internal pre-matching facilitates a simplified external matching approach and the highest in-band gain potential of the device. The device operates with unique matching at each of the popular Wi MAX bands with the inherent repeatability of an In Ga P HBT process. General Description Absolute Maximum Ratings Voltage Supply (Vcc) Current (Icc) Dissipated Power (Pdiss) Input Power (Pin) Storage Temperature (Tstg) Channel Temperature (Tch) Thermal Resistance (Rth) Operating Backside Temperature (Tb) 4.5 (min) / 12 V (max) 2000 m A 18W 22 d Bm -60 to +150 ºC 175 ºC 5 ºC/W -40 ºC to (see note 1) Operation outside any of these limits can cause permanent damage. (1) Caclulate maximum operating temperature Tmax using the following formula: Tmax=175-(Pdiss [W] x 5) [C]. Electrical Characteristics (Ambient Temperature T = 25 o C,Vcc = 12V)1 Parameter Operating Frequency (f ) Quiescent Current (Icq)2 Power Gain @ Pout = 26.5 d Bm (Gps) Current @ 26.5 d Bm (Icc) Output Power @ EVM = 2.5% (Pout)3 Adjacent Channel Power Ratio @ Pout=26.5 d Bm (ACPR)4 Input Reflection Coefficient (S11) Noise Figure...