CMM1100 Datasheet | Mimix Broadband

2.0-18.0 GHz Ga As MMIC Low Noise Amplifier May 2006 - Rev 01-May-06 CMM1100 Chip Device Layout Features Self Bias Architecture 18.0 d B Small Signal Gain 3.5 d B Noise Figure +11.0 d Bm P1d B pression Point 100% Visual Inspection to MIL-STD-883 Method 2010 General Description Mimix Broadband’s two stage 2.0-18.0 GHz Ga As MMIC low noise amplifier has a small signal gain of 18.0 d B with a noise figure of 3.5 d B across the band. This MMIC uses Mimix Broadband’s 0.3 µm Ga As PHEMT device model technology, and is based upon optical lithography to ensure high repeatability and uniformity. The chip has surface passivation to protect and provide a rugged part with backside via holes and gold .. metallization to allow either a conductive epoxy or eutectic solder die attach process. This device is well suited for fiber optic, microwave radio, military, space, tele infrastructure, test instrumentation and VSAT...