Overview
The XP1035-BD is a linear power amplifier that operates over the 5.9-9.5GHz frequency device provides 26 dB gain and 39 dBm Output Third Order Intercept Point (OIP3) across the band and is comprised of a three stage power amplifier with an integrated, temperature compensated on-chip power device includes on-chip ESD protection structures and DC by-pass capacitors to ease the implementation and volume assembly of the device is manufactured in GaAs PHEMT device technology with BCB wafer coating to enhance ruggedness and repeatability of XP1035-BD is well suited for Point-to-Point Radio, LMDS, SATCOM and VSAT applications. Absolute Maximum Ratings1 Supply Voltage (Vd1,2,3) +7.2V Supply Current (Id1,2,3) 600 mA Gate Bias Voltage (Vg1,2,3) -3V Max Power Dissipation (Pdiss) 4.2W RF Input Power +15 dBm Operating Temperature (Ta) -55 to +85 ºC Storage Temperature (Tstg) -65 to +150 ºC Channel Temperature (Tch) -40 to MTTF Graph2 (1) Operation of this device above any one of these parameters may cause permanent damage. (2) Channel temperature directly affects a device’s MTTF.
