ERA-5SM+ Datasheet | Mini-Circuits

Features - DC-4 GHz - Single Voltage Supply - Internally matched to 50 Ohms - Unconditionally Stable - Low Performance Variation Over Temperature - Transient protected - Aqueous washable - Protected by US Patent 6,943,629 - Low additive phase noise, typically -170 d Bc/Hz @10 KHz offset Typical Applications - Cellular/ PCS/ 3G Base Station - CATV, Cable Modem & DBS - Fixed Wireless & WLAN - Microwave Radio & Test Equipment - Suitable for low phase noise applications Generic photo used for illustration purposes only CASE STYLE: WW107 +Ro HS pliant The +Suffix identifies Ro HS pliance. See our web site for Ro HS pliance methodologies and qualifications General Description ERA-5SM+ (Ro HS pliant) is a wideband amplifier offering high dynamic range. It has repeatable per- formance from lot to lot. It is enclosed in an Micro-X package. ERA-5SM+ uses Darlington configuration and is fabricated using In Ga P HBT technology. Expected MTTF is 850 years at 85°C case temperature. simplified schematic and pin description RF-OUT and DC-IN RF IN GROUND RF-OUT and DC-IN 3 4 GND GND 2 1 RF IN Function RF IN RF-OUT and DC-IN Pin Number 1 2,4 Description RF input pin. This pin requires the use of an external DC blocking capacitor chosen for the frequency of operation. RF output and bias pin. DC voltage is present on this pin; therefore a DC blocking capacitor is necessary for proper operation. An RF choke is needed to feed DC bias without loss of RF signal due to the bias connection, as shown in “Remended Application Circuit”. Connections to ground. Use via holes as shown in “Suggested Layout for PCB Design” to reduce ground path inductance for best performance. Notes A. Performance and quality attributes and conditions not expressly stated in this specification document are intended to be excluded and do not form a part of this specification document. B. Electrical specifications and performance data contained in this specification document are based on...