GALI-6F+ Datasheet | Mini-Circuits

Features - In Ga P HBT microwave amplifier - Miniature SOT-89 package - Internally Matched to 50 Ohms - Frequency range, DC to 4 GHz - Output power, 15.8 d Bm typ. - Excellent package for heat dissipation, exposed metal bottom - Low thermal resistance for high reliability - Aqueous washable - Protected by US Patent 6,943,629 Typical Applications - Cellular - PCS - munication receivers & transmitters Generic photo used for illustration purposes only Gali 6F+ CASE STYLE: DF782 +Ro HS pliant The +Suffix identifies Ro HS pliance. See our web site for Ro HS pliance methodologies and qualifications General Description Gali 6F+ (Ro HS pliant) is a wideband amplifier offering high dynamic range. It has repeatable performance from lot to lot, and is enclosed in a SOT-89 package. It uses patented Transient Protected Darlington configuration and is fabricated using In Ga P HBT technology. Expected MTTF is 8,000 years at 85°C case temperature. Gali 6F+ is designed to be rugged for ESD and supply switch-on transients. simplified schematic and pin description RF IN RF-OUT and DC-IN GROUND 3 RF-OUT & DC-IN 2 GROUND 1 RF-IN Function RF IN RF-OUT and DC-IN GND Pin Number 1 3 2,4 Description RF input pin. This pin requires the use of an external DC blocking capacitor chosen for the frequency of operation. RF output and bias pin. DC voltage is present on this pin; therefore a DC blocking capacitor is necessary for proper operation. An RF choke is needed to feed DC bias without loss of RF signal due to the bias connection, as shown in “Remended Application Circuit”. Connections to ground. Use via holes as shown in “Suggested Layout for PCB Design” to reduce ground path inductance for best performance. Notes A. Performance and quality attributes and conditions not expressly stated in this specification document are intended to be excluded and do not form a part of this specification document. B. Electrical specifications and performance data contained in this specification...