PHA-1H+ Datasheet | Mini-Circuits

OVERVIEW PHA-1H+ (Ro HS pliant) is an advanced wideband amplifier fabricated using E-PHEMT- technology and offers extremely high dynamic range over a broad frequency range and with low noise figure. In addition, the PHA-1H+, unlike petitive models, has good input and output return loss over a broad frequency range without the need for external matching ponents and has demonstrated excellent reliability. It has repeatable performance from lot to lot and is enclosed in a SOT-89 package for very good thermal performance. KEY FEATURES Feature Broad Band: 0.05 to 6.0 GHz Extremely High IP3 Versus DC power Consumption +40.4 d Bm typical at 2.4 GHz No External Matching ponents Required Advantages Broadband covering primary wireless munications bands: Cellular, PCS, LTE, Wi MAX The PHA-1H+ matches industry leading IP3 performance relative to device size and power consumption. The bination of the design and E-PHEMT Structure provides enhanced linearity over a broad frequency range as evidence in the IP3 being typically 20 d B above the P 1d B point. This feature makes this amplifier ideal for use in: y Driver amplifiers for plex waveform up converter paths y Drivers in linearized transmit systems y Secondary amplifiers in ultra High Dynamic range receivers Unlike peting products, Mini-Circuits PHA-1H+ provides Input and Output Return Loss of 10-23 d B up to 4 GHz without the need for any external matching ponents Low Noise Figure: 2.6 d B typ. up to 4 GHz A unique feature of the PHA-1H+ which separates this design from all petitors is the low noise figure perfor- 3.4 d B typ. up to 6 GHz mance in bination with the high dynamic range. Low Juction Temperature Tj=115°C at +85°C lead temperature and 135°C at +105°C lead temperature Results in excellent reliability. Low additive phase noise, typically -164 d Bc/Hz @10 KHz offset Ideal for low phase noise synthesizer applications - Enhancement mode pseudomorphic High Electron Mobility Transistor. a. Suitability for model...