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SAV-581+ Datasheet PDF

Mini-Circuits SAV-581+

SAV-581+ is an ultra-low noise, high IP3 transistor device, manufactured using E-PHEMT* technology enabling it to work with a single positive supply voltage. It has outstanding Noise Figure, particularly below 2.5 GHz, and when combining this noise figure with high IP3 performance in a single device it makes it an ideal amplifier for demanding base station applications.
Part No. SAV-581+
Datasheet SAV-581+ Download
Manufacturer
Mini-Circuits
Description E-PHEMT Transistor
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SAV-581+ datasheet page 1 preview

APPLICATIONS

y Cellular y ISM y GSM y WCDMA y WiMax y WLAN y UNII and HIPERLAN Generic photo used for illustration purposes only CASE STYLE: MMM1362 +RoHS Compliant The +Suffix identifies RoHS Compliance. See our web site for RoHS Compliance methodologies and qualifications

GENERAL DESCRIPTION

We offer these units assembled into a complete module, 50Ω in/out, noise matched and fully specified. For more information please see our TAMP family of models on our web site. SIMPLIFIED SCHEMATIC AND PIN

DESCRIPTION

DRAIN DRAIN 1 4 SOURCE GATE SOURCE SOURCE 2 3 GATE SOT-343 (SC-70) PACKAGE Function Source Gate Drain Pin Number 2&4 3 1

DESCRIPTION

Source terminal, normally connected to ground Gate used for RF Input Drain used for RF output * Enhancement mode Pseudomorphic High Electron Mobility Transistor. a. Suitability for model replacement within a particular system must be determined by and is solely the responsibility of the customer based on, among other things, electrical performance criteria, stimulus conditions, application, compatibility with other components and environmental conditions and stresses. b.
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