SAV-581+ Datasheet | Mini-Circuits

ULTRA LOW NOISE, MEDIUM CURRENT E-PHEMT Transistor 0.045-6GHz THE BIG DEAL y Low Noise Figure, 0.5 d B y Gain, 17 d B at 2 GHz y High Output IP3, +30 d Bm y Output Power at 1d B p., +20 d Bm y Medium Current, 30m A y Wide bandwidth y External biasing and matching required y May be used as replacement a,b for Avago ATF-58143 APPLICATIONS y Cellular y ISM y GSM y WCDMA y Wi Max y WLAN y UNII and HIPERLAN Generic photo used for illustration purposes only CASE STYLE: MMM1362 +Ro HS pliant The +Suffix identifies Ro HS pliance. See our web site for Ro HS pliance methodologies and qualifications GENERAL DESCRIPTION SAV-581+ is an ultra-low noise, high IP3 transistor device, manufactured using E-PHEMT- technology enabling it to work with a single positive supply voltage. It has outstanding Noise Figure, particularly below 2.5 GHz, and when bining this noise figure with high IP3 performance in a single device it makes it an ideal amplifier for demanding base station applications. We offer these units assembled into a plete module, 50Ω in/out, noise matched and fully specified. For more information please see our TAMP family of models on our web site. SIMPLIFIED SCHEMATIC AND PIN DESCRIPTION DRAIN DRAIN 1 4 SOURCE GATE SOURCE SOURCE 2 3 GATE SOT-343 (SC-70) PACKAGE Function Source Gate Drain Pin Number 2&4 3 1 Description Source terminal, normally connected to ground Gate used for RF Input Drain used for RF output - Enhancement mode Pseudomorphic High Electron Mobility Transistor. a. Suitability for model replacement within a particular system must be determined by and is solely the responsibility of the customer based on, among other things, electrical performance criteria, stimulus conditions, application, patibility with other ponents and environmental conditions and stresses. b. The Avago ATF-54143 part number is used for identification and parison purposes only REV. F ECO-010314 SAV-581+ 211025 .minicircuits. P.O. Box...