A35H1516M - RA35H1516M

Product Overview

Mitsubishi Electric Semiconductor

Part number	A35H1516M
Manufacturer	Mitsubishi Electric Semiconductor
File Size	112.99 KB
Description	RA35H1516M
Datasheet	A35H1516M Datasheet
Additional preview pages of the A35H1516M datasheet.

The RA35H1516M is a 40-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 154- to 162-MHz range.

Enhancement-Mode MOSFET Transistors (IDD≅0 @ VDD=12.5V, VGG=0V).
Pout>40W, ηT>50% @ VDD=12.5V, VGG=5V, Pin=50mW.
Low-Power Control Current IGG=1mA (typ) at VGG=5V.
Module Size: 66 x 21 x 9.88 mm.
Linear operation is possible by setting the quiescent drain current with the gate voltage and controlling the output power with the input power 1 4 5 1 2 3 4 5 RF Input (Pin) Gate Voltage (VGG), Power Control Drain Voltage (VDD), Battery RF Output (Pout).

📁 Similar Datasheet

Other Datasheets by Mitsubishi Electric Semiconductor

Published: Feb 18, 2008 |