A35H1516M Description
The RA35H1516M is a 40-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 154- to 162-MHz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage (VGG=0V), only a small leakage current flows into the drain and the RF input signal attenuates up to 60 dB.
A35H1516M Key Features
- Enhancement-Mode MOSFET Transistors (IDD≅0 @ VDD=12.5V, VGG=0V)
- Pout>40W, ηT>50% @ VDD=12.5V, VGG=5V, Pin=50mW
- Low-Power Control Current IGG=1mA (typ) at VGG=5V
- Module Size: 66 x 21 x 9.88 mm
- Linear operation is possible by setting the quiescent drain current with the gate voltage and controlling the output pow
- packed without desiccator)
- Frequency Range Output Power Total Efficiency 2