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BA01232 - GaAs RF amplifier designed

General Description

The BA01232 is GaAs RF amplifier designed for W-CDMA hand-held phone.

Key Features

  • Low voltage Vcc=3.5V High power Po=26.5dBm @1920∼1980MHz High gain Gp=27.5dB @Po=26.5dBm 2stage amplifier Internal input and output matching Small size package 4x4x1.2mm ‡E ‡D ‡C 4.00 1.40 1.2 ‡@ Pin ‡C Pout ‡A Vc1 ‡D Vcb ‡B Vc2 ‡E Vref 4.00 ‡A ‡B.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com MITSUBISHI SEMICONDUCTOR Preliminary Specifications are subject to change without notice. BA01232 HBT HYBRID IC OUTLINE DRAWING Unit : millimeters DESCRIPTION The BA01232 is GaAs RF amplifier designed for W-CDMA hand-held phone. ‡@ FEATURES Low voltage Vcc=3.5V High power Po=26.5dBm @1920∼1980MHz High gain Gp=27.5dB @Po=26.5dBm 2stage amplifier Internal input and output matching Small size package 4x4x1.2mm ‡E ‡D ‡C 4.00 1.40 1.2 ‡@ Pin ‡C Pout ‡A Vc1 ‡D Vcb ‡B Vc2 ‡E Vref 4.00 ‡A ‡B APPLICATION W-CDMA(UTRA/FDD) mobile transmitter (UE Power Class 3). ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Symbol Vcc Pin Tc(op) Tstg Parameter Supply voltage of HPA Input power Operating case temp. Storage temp.