BCR3AS Description
3A VDRM ..............................................................400V/600V IFGT !, IRGT !, IRGT # ......................... Feb.1999 MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR3AS LOW POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE Limits Symbol IDRM VTM VFGT ! IRGT # VGD Rth (j-c) (dv/dt)c Gate non-trigger voltage Critical-rate of rise of off-state mutating voltage Gate trigger current V2 Gate trigger voltage...