Datasheet Summary
MITSUBISHI IGBT MODULES
HIGH POWER SWITCHING USE INSULATED TYPE
A B H E E H S
C2E1 E2 C1
E2 G2
G1 E1
- M5 THD (3 TYP.) P
- DIA. (2 TYP.) J J J
TAB#110 t=0.5
Description: Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of two IGBTs in a half-bridge configuration with each transistor having a reverse-connected super-fast recovery free-wheel diode. All ponents and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. Features
: ٗ Low Drive Power ٗ Low VCE(sat) ٗ Discrete Super-Fast Recovery Free-Wheel Diode ٗ High Frequency Operation...
