CM150DY-12H Datasheet | Mitsubishi Electric

MITSUBISHI IGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE A B H E E H S C2E1 E2 C1 E2 G2 G1 E1 - M5 THD (3 TYP.) P - DIA. (2 TYP.) J J J TAB#110 t=0.5 Description: Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of two IGBTs in a half-bridge configuration with each transistor having a reverse-connected super-fast recovery free-wheel diode. All ponents and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. Features : ٗ Low Drive Power ٗ Low VCE(sat) ٗ Discrete Super-Fast Recovery Free-Wheel Diode ٗ High Frequency Operation...