CM200DU-24H Datasheet | Mitsubishi Electric

Description : Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of two IGBTs in a half-bridge configuration with each transistor having a reverse-connected super-fast recovery free-wheel diode. All ponents and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. Features : ٗ Low Drive Power ٗ Low VCE(sat) ٗ Discrete Super-Fast Recovery Free-Wheel Diode ٗ High Frequency Operation ٗ Isolated Baseplate for Easy Heat Sinking Applications: ٗ AC Motor Control ٗ Motion/Servo Control ٗ UPS ٗ Welding Power Supplies Ordering Information: Example: Select the plete module number you desire from the table - i.e. CM200DU-24H is a 1200V (VCES), 200 Ampere Dual IGBT Module. Type CM Current Rating Amperes 200 VCES Volts (x 50) 24 G2 E2 C2E1 E2 C1 E1 G1 Outline Drawing and Circuit Diagram Dimensions A B C D E F G H J Inches 4.25 2.44 3.66±0.01 1.88±0.01 0.87 0.16 0.24 0.59 Millimeters 108.0 62.0 93.0±0.25 48.0±0.25 22.0 4.0 6.0 15.0 Dimensions K L M N P Q R S T Inches 0.71 0.87 0.33 0.10 0.85 0.98 0.11 0.25 Dia. 0.6 Millimeters 18.0 22.0 8.5 2.5 21.5 25.0 2.8 6.5 Dia. 15.15 1.14 +0.04/-0.02 29 +1.0/-0.5 Sep.1998 MITSUBISHI IGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified Ratings Junction Temperature Storage Temperature Collector-Emitter Voltage (G-E SHORT) Gate-Emitter Voltage (C-E SHORT) Collector Current (Tc = 25°C) Peak Collector Current (Tj ≤ 150°C) Emitter Current- - (Tc = 25°C) Peak Emitter Current- - Maximum Collector Dissipation (Tc = 25°C) Mounting Torque, M6 Main Terminal Mounting Torque, M6 Mounting Weight Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) Symbol Tj Tstg VCES VGES IC ICM IE IEM Pc - - - Viso CM200DU-24H -40 to 150 -40 to 125 1200 ±20 200 400- 200 400- 1130 3.5~4.5 3.5~4.5 400 2500 Units °C °C Volts Volts Amperes Amperes Amperes Amperes Watts N- m N- m Grams...