CM400HU-24F Datasheet | Mitsubishi Electric

MITSUBISHI IGBT MODULES HIGH POWER SWITCHING USE ¡IC 400A ¡VCES 1200V ¡Insulated Type ¡1-elements in a pack APPLICATION General purpose inverters & Servo controls, etc OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 107 93±0.25 13.5 26 29 20.5 4- φ6.5 MOUNTING HOLES 8.5 12.55 10 9.5 62 48±0.25 2- M4NUTS 18 Tc measured point 2- M8NUTS 4 +1 26 - 0.5 LABEL 34+1 - 0.5 CIRCUIT DIAGRAM Aug. 1999 MITSUBISHI IGBT MODULES HIGH POWER SWITCHING USE MAXIMUM RATINGS (Tj = 25°C) Symbol VCES VGES IC ICM IE (Note 1) IEM (Note 1) PC (Note 3) Tj Tstg Viso - - Parameter Collector-emitter voltage Gate-emitter voltage Collector current Emitter current Maximum collector dissipation Junction temperature Storage temperature Isolation voltage Torque strength Weight G-E Short C-E Short TC = 25°C Pulse TC = 25°C Pulse TC = 25°C Conditions Ratings 1200 ±20 400 800 400 800 1600 - 40 ~ +150 - 40 ~ +125 2500 8.8 ~ 10.8 3.5 ~ 4.5 1.3 ~ 1.7 450 Unit V V A A W °C °C V N- m N- m N- m g (Note 2) (Note 2) Main terminal to base plate, AC 1 min. Main Terminal M8 Mounting holes M6 G(E) Terminal M4 Typical value ELECTRICAL CHARACTERISTICS (Tj = 25°C) Symbol ICES VGE(th) IGES VCE(sat) Cies Coes Cres QG td(on) tr td(off) tf trr (Note 1) Qrr (Note 1) VEC(Note 1) Rth(j-c)Q Rth(j-c)R Rth(c-f) Rth(j-c’)Q RG Parameter Collector cutoff current Gate-emitter threshold voltage Gate leakage current Collector-emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Reverse recovery time Reverse recovery charge Emitter-collector voltage Thermal resistance- 1 Contact thermal resistance Thermal resistance External gate resistance Test conditions VCE =...