CM450HA-5F Datasheet | Mitsubishi Electric

Description : Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of one IGBT in a single configuration, with a reverse connected super-fast recovery free-wheel diode. All ponents and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. Features : ٗ Low Drive Power ٗ Low VCE(sat) ٗ Discrete Super-Fast Recovery Free-Wheel Diodes ٗ High Frequency Operation ٗ Isolated Baseplate for Easy Heat Sinking Applications: ٗ UPS ٗ Forklift Outline Drawing and Circuit Diagram Dimensions A B C D E F G H J Inches 3.82 3.15 0.69 1.14 1.04 1.89 0.63 0.24 0.26 Millimeters 97.0 80.0 17.5 29.0 26.5 48.0 16.0 6.0 6.7 Dimensions K L M N P Q R S Inches 1.14 1.42 0.28 0.26 Dia. M4 Metric M6 Metric 0.51 0.35 Millimeters 29.0 - 0.5 36.0 - 0.5 7.0 Dia. 6.5 M4 M6 13.0 9.0 +1.0 +1.0 Ordering Information: Example: Select the plete nine digit module part number you desire from the table below - i.e. CM450HA-5F is a 250V (VCES), 450 Ampere Single IGBT Module. Type CM Current Rating Amperes 450 VCES Volts (x 50) 5 Sep.1998 MITSUBISHI IGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE Absolute Maximum Ratings, Tj = 25°C unless otherwise specified Ratings Junction Temperature Storage Temperature Collector-Emitter Voltage (G-E Short) Gate-Emitter Voltage (C-E Short) Collector Current (TC = 25°C) Peak Collector Current (Tj ≤ 150°C) Emitter Current- - (TC = 25°C) Peak Emitter Current- - Maximum Collector Dissipation (TC = 25°C) Mounting Torque, M6 Main Terminal Mounting Torque, M6 Mounting Mounting Torque, M4 Terminal Weight Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) - Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating. - - Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). Symbol Tj Tstg VCES VGES IC ICM IE IEM Pc - - - - Viso CM450HA-5F -40 to 150...