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CM50DY-28H - IGBT Module

Datasheet Summary

Description

Mitsubishi IGBT Modules are designed for use in switching applications.

Each module consists of two IGBTs in a half-bridge configuration with each transistor having a reverse-connected super-fast recovery free-wheel diode.

Features

  • ٗ Low Drive Power ٗ Low VCE(sat) ٗ Discrete Super-Fast Recovery Free-Wheel Diode ٗ High Frequency Operation ٗ Isolated Baseplate for Easy Heat Sinking.

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Datasheet preview – CM50DY-28H

Datasheet Details

Part number CM50DY-28H
Manufacturer Mitsubishi Electric Semiconductor
File Size 48.86 KB
Description IGBT Module
Datasheet download datasheet CM50DY-28H Datasheet
Additional preview pages of the CM50DY-28H datasheet.

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Full PDF Text Transcription

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MITSUBISHI IGBT MODULES CM50DY-28H MEDIUM POWER SWITCHING USE INSULATED TYPE A B C F F K E2 G2 Q - DIA. (2 TYP.) D M G1 E1 J C2E1 E2 C1 N (3 TYP.) R S - M5 THD (3 TYP.) R R TAB#110 t=0.5 H L H P E G Description: Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of two IGBTs in a half-bridge configuration with each transistor having a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management.
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