CM50TF-28H Datasheet | Mitsubishi Electric

Description : Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of six IGBTs in a three phase bridge configuration, with each transistor having a reverse-connected superfast recovery free-wheel diode. All ponents and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. Features : ٗ Low Drive Power ٗ Low VCE(sat) ٗ Discrete Super-Fast Recovery Free-Wheel Diode ٗ High Frequency Operation ٗ Isolated Baseplate for Easy Heat Sinking Applications: ٗ AC Motor Control ٗ Motion/Servo Control ٗ UPS ٗ Welding Power Supplies Ordering Information: Example: Select the plete part module number you desire from the table below -i.e. CM50TF-28H is a 1400V (VCES), 50 Ampere Six-IGBT Module. Type CM Current Rating Amperes 50 VCES Volts (x 50) 28 Gu N Eu N U N Gv N Ev N V Gw N Ew N W Outline Drawing and Circuit Diagram Dimensions A B C D E F G H J K L M N Inches 4.02±0.02 3.58±0.02 3.150±0.01 2.913±0.01 1.69 Millimeters 102.0±0.5 91.0±0.5 80.0±0.25 74.0±0.25 43.0 Dimensions P Q R S T U V X Y Z AA AB Inches 0.65 0.55 0.47 0.43 0.39 0.33 0.32 0.24 0.22 Dia. M4 Metric 0.08 0.28 Millimeters 16.5 14.0 12.0 11.0 10.0 8.5 8.1 6.0 Dia. 5.5 M4 2.0 7.0 1.18 +0.06/-0.02 30 +1.5/-0.5 1.18 1.16 1.06 0.96 0.87 0.79 0.67 30.0 29.5 27.0 24.5 22.0 20.0 17.0 Sep.1998 MITSUBISHI IGBT MODULES MEDIUM POWER SWITCHING USE INSULATED TYPE Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified Ratings Junction Temperature Storage Temperature Collector-Emitter Voltage (G-E-SHORT) Gate-Emitter Voltage (C-E-SHORT) Collector Current (TC = 25°C) Peak Collector Current Emitter Current- - (TC = 25°C) Peak Emitter Current- - Maximum Collector Dissipation (TC = 25°C, Tj ≤ 150°C) Mounting Torque, M4 Main Terminal Mounting Torque, M5 Mounting Weight Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) - Pulse width and repetition rate should be such that the device junction temperature...