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CM50TF-28H - IGBT Module

Datasheet Summary

Description

Mitsubishi IGBT Modules are designed for use in switching applications.

Each module consists of six IGBTs in a three phase bridge configuration, with each transistor having a reverse-connected superfast recovery free-wheel diode.

Features

  • ٗ Low Drive Power ٗ Low VCE(sat) ٗ Discrete Super-Fast Recovery Free-Wheel Diode ٗ High Frequency Operation ٗ Isolated Baseplate for Easy Heat Sinking.

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Datasheet preview – CM50TF-28H

Datasheet Details

Part number CM50TF-28H
Manufacturer Mitsubishi Electric Semiconductor
File Size 57.31 KB
Description IGBT Module
Datasheet download datasheet CM50TF-28H Datasheet
Additional preview pages of the CM50TF-28H datasheet.

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Full PDF Text Transcription

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MITSUBISHI IGBT MODULES CM50TF-28H MEDIUM POWER SWITCHING USE INSULATED TYPE X Z - M4 THD (7 TYP.) Gu P E u P A C Q X S Q X N Gv P E v P Gw P E w P P Gu N E u N P Gv N E v N Gw N E w N P G B E D G U V W N R K J N U T N AA L TAB #110, t = 0.5 M M AA L Y DIA. (4 TYP.) V F H AB P GuP P EuP GvP EvP GwP EwP Description: Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of six IGBTs in a three phase bridge configuration, with each transistor having a reverse-connected superfast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management.
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