Datasheet Summary
MITSUBISHI IGBT MODULES
HIGH POWER SWITCHING USE INSULATED TYPE
A B F G E H E H G E S K R 4
- Mounting Holes
L GuP EuP GvP EvP
GwP EwP GuN EuN GvN EvN
TC Measured Point u v
TC Measured M Point GwN EwN w
N 5
- M5 NUTS E H J E J H E
TAB#110 t=0.5
Description: Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of six IGBTs in a three phase bridge configuration, with each transistor having a reverse-connected superfast recovery free-wheel diode. All ponents and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. Features
: ٗ Low Drive Power ٗ Low...
