CR04 Datasheet | Mitsubishi Electric

MITSUBISHI SEMICONDUCTOR 〈THYRISTOR 〉 CR04AM LOW POWER USE GLASS PASSIVATION TYPE CR04AM OUTLINE DRAWING φ5.0 MAX 4.4 Dimensions in mm VOLTAGE CLASS TYPE NAME 3 1 T1 TERMINAL 2 T2 TERMINAL 3 GATE TERMINAL CIRCUMSCRIBE CIRCLE φ0.7 1.25 1.25 12.5 MIN 5.0 MAX 0.63 0.4 10 0.4 0.5 0.1 6 6 0.3 0.23 1 3 2 - IT (AV) 0.4A - VDRM 400V/600V - IGT 100µ A JEDEC : TO-92 APPLICATION Ignitor, solid state relay, strobe flasher, circuit breaker, other general purpose control applications MAXIMUM RATINGS Symbol VRRM VRSM VR (DC) VDRM VD (DC) Parameter Repetitive peak reverse voltage Non-repetitive peak reverse voltage DC reverse voltage Repetitive peak off-state voltage DC off-state voltage V1 V1 Voltage class 8 400 500 320 400 320 12 600 720 480 600 480 Symbol IT (RMS) IT (AV) ITSM I2t PGM PG (AV) VFGM VRGM IFGM Tj Tstg - Parameter RMS on-state current Average on-state current Surge on-state current I2t for fusing Conditions mercial frequency, sine half wave, 180° conduction, Ta=54° C 60Hz sine half wave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60Hz, surge on-state current Ratings Peak gate power dissipation Average gate power dissipation Peak gate forward voltage Peak gate reverse voltage Peak gate forward current Junction temperature Storage temperature Weight Typical value - 40 ~ +125 - 40 ~ +125 V1. With Gate-to-cathode resistance RGK =1kΩ Feb.1999 3.9 MAX Unit V V V V V Unit A A A A2s W W V V A °C °C g MITSUBISHI SEMICONDUCTOR 〈...