CR10CY Datasheet | Mitsubishi Electric

MITSUBISHI SEMICONDUCTOR 〈HIGH-SPEED SWITCHING THYRISTOR 〉 MEDIUM POWER, INVERTER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE OUTLINE DRAWING 2 3 Dimensions in mm (16.2) φ2.0 MIN 10 MAX 19.5 MAX M6×1 1 3 MICA WASHER φ32×φ6×t0.25 SPACER φ9×φ6.2×t1 SOLDERLESS TERMINAL  TELEGRAPH WIRE   1.04~2.63mm2  11 MAX 1.9 MIN - IT (AV) 10A - VDRM 400V/600V - IGT 40m A APPLICATION Inverter, DC choppers, DC static switches, pulse generator MAXIMUM RATINGS Symbol VRRM VRSM VDRM VDSM Parameter Repetitive peak reverse voltage Non-repetitive peak reverse voltage Repetitive peak off-state voltage Non-repetitive peak off-state voltage LOCK WASHER M6 BRASS NUT M6×1 1 CATHODE 2 ANODE 3 GATE Note: Mica washer and spacer are provided only upon request. Voltage class 8 400 500 400 500 12 600 720 600 720 26 MAX φ8.7 MAX 3 MIN Unit V V V V Symbol IT (RMS) IT (AV) ITSM I2t di/dt PGM PG (AV) VFGM VRGM IFGM Tj Tstg - - Parameter RMS on-state current Average on-state current Surge on-state current I2t for fusing Critical rate of rise of on-state current Peak gate power dissipation Average gate power dissipation Peak gate forward voltage Peak gate reverse voltage Peak gate forward current Junction temperature Storage temperature Mounting torque Weight Typical value Conditions mercial frequency, sine half wave, 180° C conduction, Tc=66° C 60Hz sine half wave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60Hz, surge on-state current VD=1/2VDRM, ITM=30A, IG=0.1A, T c=25°C, f=60Hz Ratings 15.5 10 200 165 100 5.0 0.5 10 5 2 - 30 ~ +125 - 30 ~ +125 30 2.94 8.8 Unit A A A A2s A/µ s W W V V A °C °C kg- cm N- m g Feb.1999 MITSUBISHI SEMICONDUCTOR 〈 HIGH-SPEED SWITCHING THYRISTOR〉 MEDIUM POWER, INVERTER...