CR3AMZ Datasheet | Mitsubishi Electric

MITSUBISHI SEMICONDUCTOR 〈HIGH-SPEED SWITCHING THYRISTOR 〉 LOW POWER, STROBE USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE OUTLINE DRAWING 1.0±0.5 Dimensions in mm TYPE NAME VOLTAGE CLASS 8 MAX 4 MAX 12 MIN 1.2±0.1 0.8 0.8 2.5 2.5 4.5 MAX 1.5 MIN 1.55±0.1 10 MAX 2 1 CATHODE 2 ANODE 3 GATE 1 - IT (AV) 0.4A - VDRM 400V - IGT 30m A APPLICATION Automatic strobe flasher TO-202 MAXIMUM RATINGS Symbol VRRM VRSM VDRM VDSM Parameter Repetitive peak reverse voltage Non-repetitive peak reverse voltage Repetitive peak off-state voltage Non-repetitive peak off-state voltage Voltage class 8 400 480 400 480 Unit V V V V Symbol IT (AV) ITRM PGM PG (AV) VFGM IFGM Tj Tstg - Parameter Average on-state current Repetitive peak on-state current V1 Peak gate power dissipation Average gate power dissipation Peak gate forward voltage Peak gate forward current Junction temperature Storage temperature Weight Typical value Conditions mercial frequency, sine half wave, 180° conduction, CM=700 µF with discharge current Ratings 0.4 200 0.5 0.1 6 0.5 - 40 ~ +125 - 40 ~ +125 1.1 Unit A A W W V A °C °C g V1. Refer to sections 1, 2 on STROBE FLASHER APPLICATION shown in the last sheet for CR3JM. Feb.1999 MITSUBISHI SEMICONDUCTOR 〈 HIGH-SPEED SWITCHING THYRISTOR〉 LOW POWER, STROBE USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE ELECTRICAL CHARACTERISTICS Symbol IRRM IDRM VTM VGT VGD IGT Cc Parameter Repetitive peak reverse current Repetitive peak off-state current On-state voltage Gate trigger voltage Gate non-trigger voltage Gate trigger current mutating capacitor V2 Tj=25 °C, VRRM applied Tj=25 °C, VDRM applied Ta=25°C, I TM=3A, Instantaneous value Tj=25 °C, VD =6V, RL=6Ω Tj=125°C, VD=1/2VDRM Tj=25 °C, VD =6V, RL=6Ω CM=700 µF, VCM...