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MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR
CT30VM-8
STROBE FLASHER USE
CT30VM-8
OUTLINE DRAWING
1.5MAX. r 10.5MAX.
Dimensions in mm
1.3
1 13.2 ± 0.5
1.5MAX. 8.6 ± 0.3 9.8 ± 0.5
0.5 2.5 2.5
0.5
wr
q
¡VCES ................................................................................ 400V ¡ICM .................................................................................... 180A
q GATE w COLLECTOR e EMITTER r COLLECTOR e
TO-220C
APPLICATION Strobe Flasher.
MAXIMUM RATINGS
Symbol VCES VGES VGEM ICM Tj Tstg
(Tc = 25°C)
Parameter Collector-emitter voltage Gate-emitter voltage Peak gate-emitter voltage Collector current (Pulsed) Junction temperature Storage temperature
Conditions VGE = 0V VCE = 0V, See notice 4 VCE = 0V, tw = 0.5s See figure 1
2.6 ± 0.
CT30VM-8 Datasheet
