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MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR
CT30VS-8
STROBE FLASHER USE
CT30VS-8
OUTLINE DRAWING
1.5MAX.
r 10.5MAX.
Dimensions in mm
4.5 1.3
1.5MAX. 8.6 ± 0.3 9.8 ± 0.5
3.0 +0.3 –0.5
0
+0.3 –0
1 5 0.8 0.5
q w e wr
2.6 ± 0.4
q
q GATE w COLLECTOR e EMITTER r COLLECTOR e
¡VCES ............................................................................... 400V ¡ICM ................................................................................... 180A
TO-220S
APPLICATION Strobe Flasher.
MAXIMUM RATINGS
Symbol VCES VGES VGEM ICM Tj Tstg
(Tc = 25°C)
Parameter Collector-emitter voltage Gate-emitter voltage Peak gate-emitter voltage Collector current (Pulsed) Junction temperature Storage temperature
Conditions VGE = 0V VCE = 0V, See notice 4 VCE = 0V, tw = 0.