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FA01219A Datasheet GaAs FET HYBRID IC

Manufacturer: Mitsubishi Electric

General Description

FA01219A is RF Hybrid IC designed for 0.8GHz band small size handheld radio.

1 Unit:mm GND 8

Overview

MITSUBISHI SEMICONDUCTOR GaAs FET FA01219A GaAs FET HYBRID IC.

Key Features

  • Low voltage.
  • High gain.
  • High efficiency.
  • High power 3.5V 22.5B 50% 30.5dBm 2 7 3 6 4 5.