FA01219A
FA01219A is GaAs FET HYBRID IC manufactured by Mitsubishi Electric.
MITSUBISHI SEMICONDUCTOR GaAs FET
GaAs FET HYBRID IC
DESCRIPTION
FA01219A is RF Hybrid IC designed for 0.8GHz band small size handheld radio.
Unit:mm GND
Features
- Low voltage
- High gain
- High efficiency
- High power 3.5V 22.5B 50% 30.5dBm
APPLICATION
PDC0.8GHz
GND 10.0
0.8 2.0 6.0
1 RF INPUT 2 VD1 3 4 5 6
GND VD2
RF OUTPUT GND 7 GND 8 VG1,2...
