FS2ASJ-3
FS2ASJ-3 is N-Channel Power MOSFET manufactured by Mitsubishi Electric.
MITSUBISHI Nch POWER MOSFET
FS50UM-06
HIGH-SPEED SWITCHING USE
FS50UM-06
OUTLINE DRAWING
10.5MAX. r
3.2 7.0
Dimensions in mm
4.5 1.3
16 f 3.6
3.8MAX.
12.5MIN.
4.5MAX.
2.6 q w e wr q GATE w DRAIN e SOURCE r DRAIN e
¡10V DRIVE ¡VDSS 60V ¡r DS (ON) (MAX) 22m Ω ¡ID 50A ¡Integrated Fast Recovery Diode (TYP.) 65ns q
TO-220
APPLICATION Motor control, Lamp control, Solenoid control DC-DC converter, etc.
MAXIMUM RATINGS
Symbol VDSS VGSS ID IDM IDA IS ISM PD T ch T stg
- (Tc = 25°C)
Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Avalanche drain current (Pulsed) Source current Source current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Weight Typical value VGS = 0V VDS = 0V
Conditions
Ratings 60 ±20 50 200 50 50 200 70
- 55 ~ +150
- 55 ~ +150 2.0
Unit V V A A A A A W °C °C g
Feb.1999
L = 100µH
MITSUBISHI Nch POWER MOSFET
FS50UM-06
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS
Symbol V (BR) DSS IGSS IDSS VGS (th) r DS (ON) VDS (ON) y fs Ciss Coss Crss td (on) tr td (off) tf VSD Rth (ch-c) trr Parameter Drain-source breakdown voltage Gate-source leakage current Drain-source leakage current Gate-source threshold voltage
(Tch = 25° C)
Test conditions ID = 1m A, VGS = 0V VGS = ± 20V, VDS = 0V VDS = 60V, VGS = 0V ID = 2m A, VDS = 10V ID = 25A, VGS = 10V ID = 25A, VGS = 10V ID = 25A, VDS = 10V VDS = 10V, VGS = 0V, f = 1MHz
Limits Min....
