FS30VS-2 Datasheet | Mitsubishi Electric

MITSUBISHI Nch POWER MOSFET FS30ASJ-2 HIGH-SPEED SWITCHING USE FS30ASJ-2 OUTLINE DRAWING 6.5 5.0 ± 0.2 Dimensions in mm r 5.5 ± 0.2 1.5 ± 0.2 0.5 ± 0.1 1.0MAX. 2.3MIN. 10MAX. 0.5 ± 0.2 0.8 0.9MAX. 2.3 q w e wr q GATE w DRAIN e SOURCE r DRAIN e ¡4V DRIVE ¡VDSS 100V ¡r DS (ON) (MAX) 84mΩ ¡ID 30A ¡Integrated Fast Recovery Diode (TYP.) 80ns q MP-3 APPLICATION Motor control, Lamp control, Solenoid control DC-DC converter, etc. MAXIMUM RATINGS Symbol VDSS VGSS ID IDM IDA IS ISM PD Tch Tstg - (Tc = 25°C) Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Avalanche drain current (Pulsed) Source current Source current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Weight Typical value VGS = 0V VDS = 0V Conditions Ratings 100 ± 20 30 120 30 30 120 35 - 55 ~ +150 - 55 ~ +150 0.26 Unit V V A A A A A W °C °C g Feb.1999 L = 100µH MITSUBISHI Nch POWER MOSFET FS30ASJ-2 HIGH-SPEED SWITCHING USE ELECTRICAL CHARACTERISTICS Symbol V (BR) DSS IGSS IDSS VGS (th) r DS (ON) r DS (ON) VDS (ON) y fs Ciss Coss Crss td (on) tr td (off) tf VSD Rth (ch-c) trr Parameter Drain-source breakdown voltage Gate-source leakage current Drain-source leakage current Gate-source threshold voltage (Tch = 25° C) Test conditions ID = 1m A, VGS = 0V VGS = ± 20V, VDS = 0V VDS = 100V, V GS = 0V ID = 1m A, VDS = 10V ID = 15A, VGS = 10V ID = 15A, VGS = 4V ID = 15A, VGS = 10V ID = 15A, VDS = 10V VDS = 10V, VGS = 0V, f =...