FU-427SHL-8M22 Datasheet PDF - Mitsubishi Electric Semiconductor 1.3 um LD MODULE Specs

FU-427SHL-8M22 - 1.3 um LD MODULE

Datasheet Summary

Description

Mod ule type FU-427SHL-8M22 has been developed for coupling a sin glemode optical fib er and a 1.3 mm wavelength InGaAsP LD (Laser diode).

FU-427SHL -8 M22 is suitable to light source for measurning instruments(especially, OTDR).

Features

High optical output power Emission wavelength is in 1.3 mm band MQW.
active layer FSBH.
structure fabricated by all MOCVD process.
Multiple quantum well.
Facet selective-growth buried heterostructure.

Datasheet Details

Part number	FU-427SHL-8M22
Manufacturer	Mitsubishi Electric Semiconductor
File Size	37.84 KB
Description	1.3 um LD MODULE
Datasheet	FU-427SHL-8M22 Datasheet
Additional preview pages of the FU-427SHL-8M22 datasheet.

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Full PDF Text Transcription

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MITSUBISHI (OPTICAL DEVICES) FU-427SHL-8M22 1.3 mm LD MODULE WITH SINGLEMODE FIBER PIGTAIL DESCRIPTION Mod ule type FU-427SHL-8M22 has been developed for coupling a sin glemode optical fib er and a 1.3 mm wavelength InGaAsP LD (Laser diode). FU-427SHL -8 M22 is suitable to light source for measurning instruments(especially, OTDR). FEATURES High optical output power Emission wavelength is in 1.3 mm band MQW* active layer FSBH** structure fabricated by all MOCVD process *Multiple quantum well **Facet selective-growth buried heterostructure APPLICATION OTDR ABSOLUTE MAXIMUM RATINGS Parameter Laser diode Reverse voltage Forword current Operating case temperature Storage temperature (Tc=25° C) Symbol Vrl Ifl Tc Tstg Conditions Pulse(Note 1) Rating 2 1 -20~+60 -40~+70 Unit V A °C °C Note 1.

Published: Mar 23, 2005 |